Publication:
Single-electron sensing for silicon-based charge pumps

dc.contributor.advisor Dzurak, Andrew en_US
dc.contributor.author Sun, Yuxin en_US
dc.date.accessioned 2022-03-22T16:11:37Z
dc.date.available 2022-03-22T16:11:37Z
dc.date.issued 2017 en_US
dc.description.abstract There is currently considerable international effort aimed at utilising single electron tunnelling effects to develop a highly accurate electrical current standard that is dependent only on the electron charge (e) and a highly accurate frequency (f) standard, by transferring one electron at a time at a frequency in the GHz range. However, the accuracy requirements remain challenging due to measurement limitations. In this thesis, we focus on a silicon (Si) based single-electron pump with an in-situ Al-SET (aluminium single-electron transistor) charge sensor for error detection, which avoids many limitations present in direct current measurements. We aim to design and fabricate these integrated devices for high-fidelity charge sensing. Firstly, we designed and compared device structures using modelling and simulation. The simulation methods were verified by comparing simulations with experimental results on earlier generation pumps. This enabled identification of a new design, incorporating an Al-SET sensor with up to forty times greater sensitivity than that of previous pumps with Si-SET sensors. Next, we fabricated stand-alone Al-SETs of the selected design. We found that when using a fabrication process previously used in our laboratory, only 30% of the batches had complete and clear metal structures. By adding an O2 plasma ash and modifying the evaporation process, 90% of the batches were then free from this problem. These Al-SETs showed good superconducting operation when tested at millikelvin temperatures. The measured conductance of 9.2 nA/e is excellent for charge sensing purposes, and almost an order of magnitude better than the Si-SET sensor in the old design. Finally, we fabricated three batches of integrated devices, incorporating both a Si-MOS pump and Al-SET sensors. In these initial trials, we used 15nm-thick gates, and demonstrated successful functioning of such thin metal gates. The low yield of the Al-SETs meant that we could not demonstrate a device with full pump and sensor functionality. However, the work done in this thesis provides a good foundation for the project. Further investigations will be required to increase the yield of Al-SETs to achieve full device functionality and demonstrations of high-accuracy error counting. en_US
dc.identifier.uri http://hdl.handle.net/1959.4/58860
dc.language English
dc.language.iso EN en_US
dc.publisher UNSW, Sydney en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/au/ en_US
dc.subject.other Charge pumping en_US
dc.subject.other Single-electron sensing en_US
dc.subject.other Al-SET en_US
dc.subject.other Nanofabrication en_US
dc.title Single-electron sensing for silicon-based charge pumps en_US
dc.type Thesis en_US
dcterms.accessRights open access
dcterms.rightsHolder Sun, Yuxin
dspace.entity.type Publication en_US
unsw.accessRights.uri https://purl.org/coar/access_right/c_abf2
unsw.identifier.doi https://doi.org/10.26190/unsworks/20048
unsw.relation.faculty Engineering
unsw.relation.originalPublicationAffiliation Sun, Yuxin, Electrical Engineering & Telecommunications, Faculty of Engineering, UNSW en_US
unsw.relation.originalPublicationAffiliation Dzurak, Andrew, Electrical Engineering & Telecommunications, Faculty of Engineering, UNSW en_US
unsw.relation.school School of Electrical Engineering and Telecommunications *
unsw.thesis.degreetype Masters Thesis en_US
Files
Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
public version.pdf
Size:
3.4 MB
Format:
application/pdf
Description:
Resource type