Design, construction and testing of a high-vacuum anneal chamber for in-situ crystallisation of silicon thin-film solar cells

Abstract

Thin-film solar cells on glass substrates are likely to have a bright future due to the potentially low costs and the short energy payback times. Polycrystalline silicon (poly-Si, grain size > 1 pm) has the advantage of being non-toxic, abundant, and long-term stable. Glass as a substrate, however, limits the processing temperatures to ~600°C for longer process steps. Films with large grain size can be achieved by solid phase crystallisation (SPC), and especially by solid phase epitaxy (SPE) on seed layers, using amorphous silicon deposited at low temperatures as a precursor film. With SPC and SPE, the amorphous silicon film is typically crystallised at ~600°C over hours. During this anneal at atmospheric pressure -depending on the properties of the amorphous silicon film- ambient gas can percolate the film and can negatively affect the crystallisation. In this work, a high-vacuum anneal chamber was designed and built to allow the in-situ crystallisation of amorphous silicon films deposited on glass in a PECVD cluster tool. An important aspect of the design was the comfortable and safe operation of the vacuum anneal chamber to enable unattended operation. This was realised by means of a state-of-the-art, programmable temperature controller and a control circuit design that incorporates various safety interlocks. The chamber interior was optimised such that a temperature uniformity of 2-3K across the sample area was achieved. The chamber was calibrated and tested, and SPC and SPE samples were successfully crystallised. In initial SPC crystallisation experiments with solar cell structures, after post-deposition treatments, a 1 -sun open-circuit voltage of 465 mV was obtained, similar to furnace-annealed samples. In initial experiments with SPE solar cell structures, difficulties regarding the characterisation of the unmetallised solar cells with the quasi-steady-state open-circuit voltage method (QSSVOC) were encountered after post-deposition hydrogen treatment. A possible explanation for these difficulties is the contact formation with the metal probes. Furthermore, limiting factors of the QSSVOC method for the characterisation of unmetallised cells with high contact resistance values were investigated and, additionally, the accuracyof the QSSVOC setup was improved in the low light intensity range.