Effect of trivalent ion doping on the physical properties of halide perovskites single crystal

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Copyright: Shan, Yingying
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Abstract
In the last several years, in the field of versatile functional materials, hybrid perovskites have attracted many attentions and studied in many areas such as solar cells, transistors, photodetectors, and memories because of the low defect state density, high carrier mobility, and narrow bandgap. Compared with perovskite polycrystalline films, single crystals have the advantages of low trap density and no grain boundaries, and thus are expected to have better photoelectric properties. Doping hybrid perovskites is being studied extensively to improve the properties. Therefore, it is meaningful to study the doping of perovskite single crystals. In this work, I investigate the effect of doping trivalent metal ions (Sb3+ and In3+) into organo-lead halide perovskite single crystal. Different volumes of Sb3+ and In3+ are doped into MAPbBr3 single crystal to replace Pb2+ and the host lattice structure of single crystal is remained. The amount that can be doped into the crystal is limited, with a small amount of dopants, good quality single crystals have been obtained, and the mobility is improved compared to the undoped single crystals. As the proportion of dopants rises, the growth of high-quality single crystals becomes more and more difficult and the structure of the crystal will also change. For the grown single crystals, some characterizations are used to observe changes in their physical properties.
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Author(s)
Shan, Yingying
Supervisor(s)
Wu, Tom(Tao)
Chu, Dewei
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Publication Year
2020
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Thesis
Degree Type
Masters Thesis
UNSW Faculty
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