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Abstract
Detecting the presence of a charge in a region of a materialâ or charge sensingâ is a crucial requirement for many solid state quantum computer implementations. Quantum point contacts are recognised as excellent charge sensing elements, and can also aid the study of the physics behind carrier transport in semiconductors. This thesis dissertation presents the fabrication and measurement results of a quantum point contact, based on silicon MOSFET technology. The device, employing a multiple gate stack, was fabricated with electron beam lithography and then measured at 4.2 Kelvin to explore the prospects for quantised conductance in a silicon nanostructure.