Publication:
Photoluminescence in crystalline silicon quantum wells
Photoluminescence in crystalline silicon quantum wells
dc.contributor.author | Cho, Eun-Chel | en_US |
dc.contributor.author | Green, Martin A. | en_US |
dc.contributor.author | Corkish, Richard Paul | en_US |
dc.contributor.author | Reece, Peter | en_US |
dc.contributor.author | Gal, Michael | en_US |
dc.contributor.author | Lee, Soo-Hong | en_US |
dc.date.accessioned | 2021-11-25T13:35:47Z | |
dc.date.available | 2021-11-25T13:35:47Z | |
dc.date.issued | 2007 | en_US |
dc.description.abstract | Crystalline silicon single quantum wells (QWs) were fabricated by high temperature thermal oxidation of ELTRANĀ® (Epitaxial Layer TRANsfer) silicon-on-insulator (SOI) wafers. The Si layer thicknesses enclosed by thermal SiO2 range from 0.8 to 5nm. Luminescence energies from ELTRAN QWs vary from 700nm (1.77eV) to 920nm (1.35eV) depending on the Si layer thickness, without evidence for the interface-mediated transitions observed in earlier reported work. The ability to detect quantum confined luminescence seems to arise from the use of ELTRAN SOI wafers, from suppressed interface state luminescence by high temperature oxidation and, possibly, from interface matching by crystalline silicon oxide. In contrast, SOI wafers prepared by the SIMOX (Separation by IMplantation of OXygen) process showed strong interface mediated features. | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://hdl.handle.net/1959.4/40067 | |
dc.language | English | |
dc.language.iso | EN | en_US |
dc.rights | CC BY-NC-ND 3.0 | en_US |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/au/ | en_US |
dc.source | Legacy MARC | en_US |
dc.subject.other | luminescence | en_US |
dc.subject.other | silicon | en_US |
dc.subject.other | quantum well | en_US |
dc.title | Photoluminescence in crystalline silicon quantum wells | en_US |
dc.type | Journal Article | en |
dcterms.accessRights | open access | |
dspace.entity.type | Publication | en_US |
unsw.accessRights.uri | https://purl.org/coar/access_right/c_abf2 | |
unsw.description.publisherStatement | Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in E.-C. Cho et al., Journal of Applied Physics 101, 024321 (2007) and may be found at: http://link.aip.org/link/?jap/101/024321 | en_US |
unsw.identifier.doiPublisher | http://dx.doi.org/10.1063/1.2430919 | en_US |
unsw.relation.faculty | Engineering | |
unsw.relation.faculty | Science | |
unsw.relation.ispartofissue | 2 | en_US |
unsw.relation.ispartofjournal | Journal of Applied Physics | en_US |
unsw.relation.ispartofpagefrompageto | 024321-1-024321-6 | en_US |
unsw.relation.ispartofvolume | 101 | en_US |
unsw.relation.originalPublicationAffiliation | Cho, Eun-Chel, ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, Faculty of Engineering, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Green, Martin A., ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, Faculty of Engineering, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Corkish, Richard Paul, ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, Faculty of Engineering, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Reece, Peter, Physics, Faculty of Science, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Gal, Michael, Physics, Faculty of Science, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Lee, Soo-Hong, ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, Faculty of Engineering, UNSW | en_US |
unsw.relation.school | School of Photovoltaic and Renewable Energy Engineering | * |
unsw.relation.school | School of Physics | * |
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