Publication:
The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatments
The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatments
dc.contributor.author | McKenzie, Warren Richard | en_US |
dc.contributor.author | Domyo, Hiroshi | en_US |
dc.contributor.author | Ho, Tran | en_US |
dc.contributor.author | Munroe, Paul | en_US |
dc.date.accessioned | 2021-11-25T15:31:15Z | |
dc.date.available | 2021-11-25T15:31:15Z | |
dc.date.issued | 2005 | en_US |
dc.description.abstract | (100) silicon thin films grown on (1ī02) sapphire substrates is the most significant of the silicon-on-insulator technologies and has been used for many years in the production of integrated circuits. This paper presents a TEM study of the evolution of crystalline defects during the heat treatments designed to improve the quality of the films. Planar defects were found to be isolated to the outer surface of the films, whilst dislocations were abundant throughout. Defect density was considerably reduced by annealing at higher temperatures. | en_US |
dc.identifier.isbn | 978-3-540-31914-6 | en_US |
dc.identifier.issn | 0930-8989 | en_US |
dc.identifier.uri | http://hdl.handle.net/1959.4/44671 | |
dc.language | English | |
dc.language.iso | EN | en_US |
dc.publisher | Springer | en_US |
dc.rights | CC BY-NC-ND 3.0 | en_US |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/au/ | en_US |
dc.source | Legacy MARC | en_US |
dc.subject.other | defects | en_US |
dc.subject.other | Silicon on sapphire | en_US |
dc.subject.other | TEM | en_US |
dc.title | The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatments | en_US |
dc.type | Conference Paper | en |
dcterms.accessRights | open access | |
dspace.entity.type | Publication | en_US |
unsw.accessRights.uri | https://purl.org/coar/access_right/c_abf2 | |
unsw.description.notePublic | http://www.springer.com/materials/book/978-3-540-31914-6 | en_US |
unsw.description.publisherStatement | The original publication is available at www.springerlink.com | en_US |
unsw.identifier.doiPublisher | http://dx.doi.org/10.1007/3-540-31915-8_78 | en_US |
unsw.publisher.place | Berlin Heidelberg | en_US |
unsw.relation.faculty | Science | |
unsw.relation.ispartofconferenceLocation | Oxford, UK | en_US |
unsw.relation.ispartofconferenceName | Microscopy of Semiconducting Materials | en_US |
unsw.relation.ispartofconferenceProceedingsTitle | Microscopy of Semiconducting Materials Microscopy of Semiconducting Materials, Proceedings of the 14th Conference | en_US |
unsw.relation.ispartofconferenceYear | 2005 | en_US |
unsw.relation.ispartofpagefrompageto | 328-329 | en_US |
unsw.relation.originalPublicationAffiliation | McKenzie, Warren Richard, Materials Science & Engineering, Faculty of Science, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Domyo, Hiroshi | en_US |
unsw.relation.originalPublicationAffiliation | Ho, Tran | en_US |
unsw.relation.originalPublicationAffiliation | Munroe, Paul, Materials Science & Engineering, Faculty of Science, UNSW | en_US |
unsw.relation.school | School of Materials Science & Engineering | * |
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