Publication:
The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatments

dc.contributor.author McKenzie, Warren Richard en_US
dc.contributor.author Domyo, Hiroshi en_US
dc.contributor.author Ho, Tran en_US
dc.contributor.author Munroe, Paul en_US
dc.date.accessioned 2021-11-25T15:31:15Z
dc.date.available 2021-11-25T15:31:15Z
dc.date.issued 2005 en_US
dc.description.abstract (100) silicon thin films grown on (1ī02) sapphire substrates is the most significant of the silicon-on-insulator technologies and has been used for many years in the production of integrated circuits. This paper presents a TEM study of the evolution of crystalline defects during the heat treatments designed to improve the quality of the films. Planar defects were found to be isolated to the outer surface of the films, whilst dislocations were abundant throughout. Defect density was considerably reduced by annealing at higher temperatures. en_US
dc.identifier.isbn 978-3-540-31914-6 en_US
dc.identifier.issn 0930-8989 en_US
dc.identifier.uri http://hdl.handle.net/1959.4/44671
dc.language English
dc.language.iso EN en_US
dc.publisher Springer en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/au/ en_US
dc.source Legacy MARC en_US
dc.subject.other defects en_US
dc.subject.other Silicon on sapphire en_US
dc.subject.other TEM en_US
dc.title The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatments en_US
dc.type Conference Paper en
dcterms.accessRights open access
dspace.entity.type Publication en_US
unsw.accessRights.uri https://purl.org/coar/access_right/c_abf2
unsw.description.notePublic http://www.springer.com/materials/book/978-3-540-31914-6 en_US
unsw.description.publisherStatement The original publication is available at www.springerlink.com en_US
unsw.identifier.doiPublisher http://dx.doi.org/10.1007/3-540-31915-8_78 en_US
unsw.publisher.place Berlin Heidelberg en_US
unsw.relation.faculty Science
unsw.relation.ispartofconferenceLocation Oxford, UK en_US
unsw.relation.ispartofconferenceName Microscopy of Semiconducting Materials en_US
unsw.relation.ispartofconferenceProceedingsTitle Microscopy of Semiconducting Materials Microscopy of Semiconducting Materials, Proceedings of the 14th Conference en_US
unsw.relation.ispartofconferenceYear 2005 en_US
unsw.relation.ispartofpagefrompageto 328-329 en_US
unsw.relation.originalPublicationAffiliation McKenzie, Warren Richard, Materials Science & Engineering, Faculty of Science, UNSW en_US
unsw.relation.originalPublicationAffiliation Domyo, Hiroshi en_US
unsw.relation.originalPublicationAffiliation Ho, Tran en_US
unsw.relation.originalPublicationAffiliation Munroe, Paul, Materials Science & Engineering, Faculty of Science, UNSW en_US
unsw.relation.school School of Materials Science & Engineering *
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