Publication:
High critical current density of MgB2 bulk superconductor doped with Ti and sintered at ambient pressure

dc.contributor.author Zhao, Yong en_US
dc.contributor.author Feng, Y. en_US
dc.contributor.author Cheng, C.H. en_US
dc.contributor.author Zhou, L. en_US
dc.contributor.author Wu, Y. en_US
dc.contributor.author Machi, T. en_US
dc.contributor.author Fudamoto, Y. en_US
dc.contributor.author Koshizuka, N. en_US
dc.contributor.author Murakami, M. en_US
dc.date.accessioned 2021-11-25T13:04:07Z
dc.date.available 2021-11-25T13:04:07Z
dc.date.issued 2001 en_US
dc.description.abstract Ti-doped MgB2 superconductors with different doping levels were prepared by solid-state reaction at ambient pressure. The density, diamagnetic signal, and Jc of the samples change significantly with the doping level, with the best result achieved at cursive chi = 0.1. At 5 K, the Jc reaches 2 x 106 A/cm2 in the self-field and 5 x 104 A/cm2 in 5 T. At 20 K, the Jc is still as high as 1.3 x 106 A/cm2 in the self-field and 9.4 x 104 A/cm2 in 2 T. It is observed that partial melting occurs in the Ti-doped samples, resulting in an excellent grain connection and extremely high density. In addition, some fine particles (with sizes from 10 to 100 nm) of the second phases induced by Ti doping are distributed in the MgB2 matrix, and this may play an important role in flux pinning enhancement. en_US
dc.identifier.issn 0003-6951 en_US
dc.identifier.uri http://hdl.handle.net/1959.4/39073
dc.language English
dc.language.iso EN en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/au/ en_US
dc.source Legacy MARC en_US
dc.title High critical current density of MgB2 bulk superconductor doped with Ti and sintered at ambient pressure en_US
dc.type Journal Article en
dcterms.accessRights open access
dspace.entity.type Publication en_US
unsw.accessRights.uri https://purl.org/coar/access_right/c_abf2
unsw.description.publisherStatement Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS, 79(8), PP.1154-1156 and may be found at (http://link.aip.org/link/?APPLAB/79/1154/1). en_US
unsw.identifier.doiPublisher http://dx.doi.org/10.1063/1.1396629 en_US
unsw.relation.faculty Science
unsw.relation.ispartofissue 8 en_US
unsw.relation.ispartofjournal Applied Physics Letters en_US
unsw.relation.ispartofpagefrompageto 1154-1156 en_US
unsw.relation.ispartofvolume 79 en_US
unsw.relation.originalPublicationAffiliation Zhao, Yong, Materials Science & Engineering, Faculty of Science, UNSW en_US
unsw.relation.originalPublicationAffiliation Feng, Y. en_US
unsw.relation.originalPublicationAffiliation Cheng, C.H., Materials Science & Engineering, Faculty of Science, UNSW en_US
unsw.relation.originalPublicationAffiliation Zhou, L. en_US
unsw.relation.originalPublicationAffiliation Wu, Y. en_US
unsw.relation.originalPublicationAffiliation Machi, T. en_US
unsw.relation.originalPublicationAffiliation Fudamoto, Y. en_US
unsw.relation.originalPublicationAffiliation Koshizuka, N. en_US
unsw.relation.originalPublicationAffiliation Murakami, M. en_US
unsw.relation.school School of Materials Science & Engineering *
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