Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

Access & Terms of Use
metadata only access
Abstract
We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals.
Persistent link to this record
DOI
Additional Link
Author(s)
Willems van Beveren, Laurens
Huebl, H.
Starrett, Robert
Morello, Andrea
Supervisor(s)
Creator(s)
Editor(s)
Translator(s)
Curator(s)
Designer(s)
Arranger(s)
Composer(s)
Recordist(s)
Conference Proceedings Editor(s)
Other Contributor(s)
Corporate/Industry Contributor(s)
Publication Year
2010
Resource Type
Conference Paper
Degree Type
UNSW Faculty