Focused Ion Beam Implantation of Diamond

Abstract

The interaction between diamond and a 30 kV Ga+ focused ion beam, commonly used for its functionalisation, has been studied. Electron back-scattered diffraction identified the critical dose for amorphisation of the diamond surface at 2×1014 Ga+/cm2. Scanning transmission electron microscopy results identified a 35nm amorphous carbon layer which, at higher doses, can swell up to 31% its own volume and accommodate a large quantity of gallium. Electron energy loss and energy dispersive X‐ray spectroscopy further characterised this layer and identified both excess hydrogen and oxygen were contained in a stable amorphous carbon structure.