Focused Ion Beam Implantation of Diamond

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Abstract
The interaction between diamond and a 30 kV Ga+ focused ion beam, commonly used for its functionalisation, has been studied. Electron back-scattered diffraction identified the critical dose for amorphisation of the diamond surface at 2×1014 Ga+/cm2. Scanning transmission electron microscopy results identified a 35nm amorphous carbon layer which, at higher doses, can swell up to 31% its own volume and accommodate a large quantity of gallium. Electron energy loss and energy dispersive X‐ray spectroscopy further characterised this layer and identified both excess hydrogen and oxygen were contained in a stable amorphous carbon structure.
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Author(s)
McKenzie, Warren Richard
Quadir, Md.
Gass, Mhairi
Munroe, Paul
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Publication Year
2010
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Journal Article
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UNSW Faculty
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download FIB implantation of Diamond 19_8_10.pdf 441.23 KB Adobe Portable Document Format
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