Publication:
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

dc.contributor.author Willems van Beveren, L.H. en_US
dc.contributor.author Gauja, E. en_US
dc.contributor.author Johnson, B.C. en_US
dc.contributor.author McCallum, J.C. en_US
dc.date.accessioned 2021-11-25T15:28:26Z
dc.date.available 2021-11-25T15:28:26Z
dc.date.issued 2010 en_US
dc.description.abstract A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion-implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 °C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 °C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion-implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study. en_US
dc.identifier.issn 0040-6090 en_US
dc.identifier.uri http://hdl.handle.net/1959.4/44575
dc.language English
dc.language.iso EN en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/au/ en_US
dc.source Legacy MARC en_US
dc.subject.other Implantation en_US
dc.subject.other DLTS en_US
dc.subject.other MOSFET en_US
dc.subject.other Interface traps en_US
dc.subject.other Minority carriers en_US
dc.subject.other EDMR en_US
dc.title Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport en_US
dc.type Journal Article en
dcterms.accessRights open access
dspace.entity.type Publication en_US
unsw.accessRights.uri https://purl.org/coar/access_right/c_abf2
unsw.identifier.doiPublisher http://dx.doi.org/10.1016/j.tsf.2009.09.152 en_US
unsw.relation.faculty Science
unsw.relation.ispartofjournal Thin Solid Films en_US
unsw.relation.ispartofpagefrompageto 2524-2527 en_US
unsw.relation.ispartofvolume 518 en_US
unsw.relation.originalPublicationAffiliation Willems van Beveren, L.H., ARC Centre of Excellence for Quantum Computer Technology, UNSW en_US
unsw.relation.originalPublicationAffiliation Gauja, E., ARC Centre of Excellence for Quantum Computer Technology, UNSW en_US
unsw.relation.originalPublicationAffiliation Johnson, B.C., The University of Melbourne en_US
unsw.relation.originalPublicationAffiliation McCallum, J.C., The University of Melbourne en_US
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