Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

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Abstract
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion-implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 °C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 °C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion-implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study.
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Author(s)
Willems van Beveren, L.H.
Gauja, E.
Johnson, B.C.
McCallum, J.C.
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Publication Year
2010
Resource Type
Journal Article
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UNSW Faculty
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