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The mobility of the electrons in GaN films grown by metalorganic vapor phase epitaxy has been investigated. It is observed that the mobility is anisotropic with a maximum in 101-0 direction and a minimum in 112-0 direction. Microstructure analyses illustrate that the density and distribution of defects in these two directions are different. These results suggest that the anisotropy in electronic mobility is caused by a hexagonally symmetric distribution of defects (grain boundaries and dislocations).