Anisotropy in electron mobility and microstructure of GaN grown by metalorganic vapor phrase epitaxy,

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Abstract
The mobility of the electrons in GaN films grown by metalorganic vapor phase epitaxy has been investigated. It is observed that the mobility is anisotropic with a maximum in 101-0 direction and a minimum in 112-0 direction. Microstructure analyses illustrate that the density and distribution of defects in these two directions are different. These results suggest that the anisotropy in electronic mobility is caused by a hexagonally symmetric distribution of defects (grain boundaries and dislocations).
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Author(s)
Feng, Dunping
Zhao, Yong
Zhang, Guangqing
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Publication Year
1999
Resource Type
Journal Article
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UNSW Faculty