Improvements in the numerical modeling of highly injected crystalline silicon solar cells Altermatt, Pietro P. en_US Sinton, Ronald A. en_US Heiser, Gernot en_US 2021-11-25T13:31:01Z 2021-11-25T13:31:01Z 2001 en_US
dc.description.abstract We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00×1010 cm−3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision. en_US
dc.identifier.issn 0927-0248 en_US
dc.language English
dc.language.iso EN en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri en_US
dc.source Legacy MARC en_US
dc.title Improvements in the numerical modeling of highly injected crystalline silicon solar cells en_US
dc.type Journal Article en
dcterms.accessRights metadata only access
dspace.entity.type Publication en_US
unsw.identifier.doiPublisher en_US
unsw.relation.faculty Engineering
unsw.relation.ispartofjournal Solar Energy Materials and Solar Cells en_US
unsw.relation.ispartofpagefrompageto 149-155 en_US
unsw.relation.ispartofvolume 65 en_US
unsw.relation.originalPublicationAffiliation Altermatt, Pietro P. , Faculty of Engineering, UNSW en_US
unsw.relation.originalPublicationAffiliation Sinton, Ronald A. en_US
unsw.relation.originalPublicationAffiliation Heiser, Gernot, Computer Science & Engineering, Faculty of Engineering, UNSW en_US School of Computer Science and Engineering *
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