Publication:
Enhancement of the point defect pinning effect in Mo-doped Bi2212 single crystals of reduced anisotropy
Enhancement of the point defect pinning effect in Mo-doped Bi2212 single crystals of reduced anisotropy
| dc.contributor.author | Han, S H | en_US |
| dc.contributor.author | Cheng, C H | en_US |
| dc.contributor.author | Dai, Y | en_US |
| dc.contributor.author | Zhang, Y | en_US |
| dc.contributor.author | Zhang, H | en_US |
| dc.contributor.author | Zhao, Yong | en_US |
| dc.date.accessioned | 2021-11-25T12:59:02Z | |
| dc.date.available | 2021-11-25T12:59:02Z | |
| dc.date.issued | 2002 | en_US |
| dc.description.abstract | High quality Bi2Sr2CaCu2−xMoxOy (x = 0, 0.01 and 0.02) single crystals have been grown by a self-flux method in a horizontal temperature gradient and their flux pinning and irreversibility behaviour have been investigated. The irreversibility lines of the undoped and Mo-doped Bi2212 crystals have been greatly improved by reducing the anisotropy parameter γ. However, this improvement is much more pronounced for Mo-doped crystals than for the undoped ones. The peak effect of magnetization loops also changes with both Mo-doping and γ. The results provide strong evidence that the point defect pinning served by Mo is greatly enhanced when the anisotropy of the system is reduced. | en_US |
| dc.identifier.issn | 0953-2048 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1959.4/38843 | |
| dc.language | English | |
| dc.language.iso | EN | en_US |
| dc.rights | CC BY-NC-ND 3.0 | en_US |
| dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/au/ | en_US |
| dc.source | Legacy MARC | en_US |
| dc.title | Enhancement of the point defect pinning effect in Mo-doped Bi2212 single crystals of reduced anisotropy | en_US |
| dc.type | Journal Article | en |
| dcterms.accessRights | metadata only access | |
| dspace.entity.type | Publication | en_US |
| unsw.accessRights.uri | http://purl.org/coar/access_right/c_14cb | |
| unsw.identifier.doiPublisher | http://dx.doi.org/10.1088/0953-2048/15/12/319 | en_US |
| unsw.relation.faculty | Science | |
| unsw.relation.ispartofjournal | Superconductor Science and Technology | en_US |
| unsw.relation.ispartofpagefrompageto | 1725-1727 | en_US |
| unsw.relation.ispartofvolume | 15 | en_US |
| unsw.relation.originalPublicationAffiliation | Han, S H, School of Physics and Electronics, State Key Laboratory of Crystal, Shandong University | en_US |
| unsw.relation.originalPublicationAffiliation | Cheng, C H, Materials Science & Engineering, Faculty of Science, UNSW | en_US |
| unsw.relation.originalPublicationAffiliation | Dai, Y, School of Physics and Electronics, State Key Laboratory of Crystal, Shandong University | en_US |
| unsw.relation.originalPublicationAffiliation | Zhang, Y, School of Physics and Electronics, State Key Laboratory of Crystal, Shandong University | en_US |
| unsw.relation.originalPublicationAffiliation | Zhang, H, Department of Physics, Peking University | en_US |
| unsw.relation.originalPublicationAffiliation | Zhao, Yong, Materials Science & Engineering, Faculty of Science, UNSW | en_US |
| unsw.relation.school | School of Materials Science & Engineering | * |