Publication:
A 5V charge pump in a standard 1.8V 0.18mm CMOS process

dc.contributor.author Hasan, Tawfique en_US
dc.date.accessioned 2022-03-16T15:19:46Z
dc.date.available 2022-03-16T15:19:46Z
dc.date.issued 2005 en_US
dc.identifier.uri http://hdl.handle.net/1959.4/56363
dc.language English
dc.language.iso EN en_US
dc.publisher UNSW, Sydney en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/au/ en_US
dc.source Thesis Digitisation Program en_US
dc.subject.other Metal oxide semiconductors. en_US
dc.subject.other Complementary. en_US
dc.title A 5V charge pump in a standard 1.8V 0.18mm CMOS process en_US
dc.type Thesis en_US
dcterms.accessRights open access
dcterms.rightsHolder Hasan, Tawfique
dspace.entity.type Publication en_US
unsw.accessRights.uri https://purl.org/coar/access_right/c_abf2
unsw.identifier.doi https://doi.org/10.26190/unsworks/4959
unsw.relation.faculty Engineering
unsw.relation.originalPublicationAffiliation Hasan, Tawfique, Electrical Engineering & Telecommunications, Faculty of Engineering, UNSW en_US
unsw.relation.school School of Electrical Engineering and Telecommunications *
unsw.thesis.degreetype Masters Thesis en_US
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