Modeling and Simulation of Tunneling through Ultra-Thin Gate Dielectrics Schenk, Andreas en_US Heiser, Gernot en_US 2021-11-25T13:31:39Z 2021-11-25T13:31:39Z 1997 en_US
dc.description.abstract Direct and Fowler-Nordheim tunneling through ultra-thin gate dielectrics is modeled based on a new approach for the transmission coefficient (TC) of a potential barrier which is modified by the image force. Under the constraint of equal actions the true barrier is mapped to a trapezoidal pseudobarrier resulting in a TC very close to the numerical solution of the Schrodinger equation for all insulator thicknesses and for all energies of the tunneling electron. The barrier height of the pseudopotential is used as a free parameter and becomes a function of energy in balancing the actions. This function can be approximated by a parabolic relation which makes the TC of arbitrary barriers fully analytical with little loss of accuracy. The model was implemented into a multidimensional device simulator and applied to the self-consistent simulation of gate currents in metal-oxide-semiconductor (MOS) capacitors with gate oxides in the thickness range 15A-42A. Excellent agreement with experimental data was obtained using a thickness-independent tunnel mass mox=0.42m0. Thanks to the CPU-time efficiency of the method the simulation of a complete MOS-field-effect-transistor with dominating gate current becomes possible and shows the potential for further applications. en_US
dc.identifier.issn 0021-8979 en_US
dc.language English
dc.language.iso EN en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri en_US
dc.source Legacy MARC en_US
dc.title Modeling and Simulation of Tunneling through Ultra-Thin Gate Dielectrics en_US
dc.type Journal Article en
dcterms.accessRights metadata only access
dspace.entity.type Publication en_US
unsw.identifier.doiPublisher en_US
unsw.relation.faculty Engineering
unsw.relation.ispartofissue 12 en_US
unsw.relation.ispartofjournal Journal of Applied Physics en_US
unsw.relation.ispartofpagefrompageto 7900-7908 en_US
unsw.relation.ispartofvolume 81 en_US
unsw.relation.originalPublicationAffiliation Schenk, Andreas en_US
unsw.relation.originalPublicationAffiliation Heiser, Gernot, Computer Science & Engineering, Faculty of Engineering, UNSW en_US School of Computer Science and Engineering *
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