Publication:
Assessment and Parameterisation of Coulomb-Enhanced Auger Recombination Coefficients in Lowly Injected Crystalline Silicon
Assessment and Parameterisation of Coulomb-Enhanced Auger Recombination Coefficients in Lowly Injected Crystalline Silicon
dc.contributor.author | Altermatt, Pietro | en_US |
dc.contributor.author | Schmidt, Jan | en_US |
dc.contributor.author | Heiser, Gernot | en_US |
dc.contributor.author | Aberle, Armin | en_US |
dc.date.accessioned | 2021-11-25T13:31:37Z | |
dc.date.available | 2021-11-25T13:31:37Z | |
dc.date.issued | 1997 | en_US |
dc.description.abstract | In traditional band-to-band Auger recombination theory, the low-injection carrier lifetime is an inverse quadratic function of the doping density. However, for doping densities below about 3E18cm^-3, the low-injection Auger lifetimes measured in the past on silicon were significantly smaller than predicted by this theory. Recently, a new theory has been developed [A. Hangleiter and R. H¿cker, Phys. Rev. Lett. 65, 215 (1990)] which attributes these deviations to Coulombic interactions between mobile charge carriers. This theory has been supported experimentally to a high degree of accuracy in n-type silicon, however, no satisfactory support has been found in p-type silicon for doping densities below 3E17cm^-3. In this work, we investigate the most recent lifetime measurements of crystalline silicon and support experimentally the Coulomb-enhanced Auger theory in p-type silicon in the doping range down to 1E16cm^-3. Based on the experimental data, we present an empirical parameterisation of the low-injection Auger lifetime. This parameterisation is valid in n- and p-type silicon with arbitrary doping concentrations and for temperatures between 70 and 400K. We implement this parameterisation into a numerical device simulator to demonstrate how the new Auger limit influences the open-circuit voltage capability of silicon solar cells. Furthermore, we briefly discuss why the Auger recombination rates are less enhanced under high-injection conditions than under low-injection conditions. | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://hdl.handle.net/1959.4/39884 | |
dc.language | English | |
dc.language.iso | EN | en_US |
dc.rights | CC BY-NC-ND 3.0 | en_US |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/au/ | en_US |
dc.source | Legacy MARC | en_US |
dc.title | Assessment and Parameterisation of Coulomb-Enhanced Auger Recombination Coefficients in Lowly Injected Crystalline Silicon | en_US |
dc.type | Journal Article | en |
dcterms.accessRights | metadata only access | |
dspace.entity.type | Publication | en_US |
unsw.accessRights.uri | http://purl.org/coar/access_right/c_14cb | |
unsw.identifier.doiPublisher | http://dx.doi.org/10.1063/1.366360 | en_US |
unsw.relation.faculty | Engineering | |
unsw.relation.ispartofissue | 10 | en_US |
unsw.relation.ispartofjournal | Journal of Applied Physics | en_US |
unsw.relation.ispartofpagefrompageto | 4938-4944 | en_US |
unsw.relation.ispartofvolume | 82 | en_US |
unsw.relation.originalPublicationAffiliation | Altermatt, Pietro, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Schmidt, Jan | en_US |
unsw.relation.originalPublicationAffiliation | Heiser, Gernot, Computer Science & Engineering, Faculty of Engineering, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Aberle, Armin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW | en_US |
unsw.relation.school | School of Photovoltaic and Renewable Energy Engineering | * |
unsw.relation.school | School of Computer Science and Engineering | * |