Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters
Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters
Author(s)
Schumacher, J
Altermatt, Pietro P.
Heiser, Gernot
Aberle, Armin G.
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Publication Year
1999
Resource Type
Conference Paper