Numerical simulation of electron-beam-induced current near a silicon grain boundary and impact of a p-n junction space charge region

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Abstract
Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical silicon grain boundary are demonstrated. They are compared with an analytical model which excludes the effect of carrier generation other than in the bulk base region of a solar cell structure. We demonstrate that in a wide range of solar cell structures recombination in the space charge region (SCR) significantly affects the EBIC results and hence needs to be included in the data evaluation. Apart from these findings, simulations of a realistic silicon solar cell structure (thick emitter, field-dependent mobility, etc.) are demonstrated.
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Author(s)
Corkish, Richard
Altermatt, Pietro P.
Heiser, Gernot
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Publication Year
2001
Resource Type
Journal Article
Degree Type
UNSW Faculty