Abstract
An analytical model is developed to decribe recombination currents arising from recombination at grain boundaries (GBs) in the depletion region of a p-n junction solar cell. Grain boundaries are modelled as having a single energy evel in the energy gap, and partial occupancy of these stats gives raise to a chage on the GB. The analytical model is compared to a complete numerical simulation package (DESSIS) and found to be in excellent agreement. Additionally,. cross sectional EBIC images of a multilayer device containing vertical GBs are presented. The experimental data is comared qualitatively with results derived from numerical modelling.