Publication:
Improvement of critical current density in MgB2 superconductors by Zr doping at ambient pressure

dc.contributor.author Feng, Y en_US
dc.contributor.author Zhao, Yong en_US
dc.contributor.author Sun, Y en_US
dc.contributor.author Liu, F.C. en_US
dc.contributor.author Fu, B.Q. en_US
dc.contributor.author Zhou, L. en_US
dc.contributor.author Cheng, C.H. en_US
dc.contributor.author Koshizuka, N en_US
dc.contributor.author Murakami, M en_US
dc.date.accessioned 2021-11-25T13:04:10Z
dc.date.available 2021-11-25T13:04:10Z
dc.date.issued 2001 en_US
dc.description.abstract We present the superconducting properties and phase compositions of Mg1-xZrxB2 bulk samples fabricated by a solid-state reaction at ambient pressure. It is found that a small amount of Zr atoms may be introduced into the lattice of MgB2, while the majority of them forms ZrB2 phase. The Mg0.9Zr0.1B2 sample shows the highest JC of 2.1x106 A/cm2 in 0.56 T at 5 K and 1.83x106 A/cm2 in self-field at 20 K, higher irreversibility field and larger upper critical field in MgB2 bulk samples. The combination of good grain connection, the reduction of grain size and small ZrB2 particles in the sample may be responsible for the significant enhancement of JC in Zr-doped samples. This technique has a great potential to prepare high performance MgB2 bulk samples and wires on an industrial scale. en_US
dc.identifier.issn 0003-6951 en_US
dc.identifier.uri http://hdl.handle.net/1959.4/39075
dc.language English
dc.language.iso EN en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/au/ en_US
dc.source Legacy MARC en_US
dc.title Improvement of critical current density in MgB2 superconductors by Zr doping at ambient pressure en_US
dc.type Journal Article en
dcterms.accessRights open access
dspace.entity.type Publication en_US
unsw.accessRights.uri https://purl.org/coar/access_right/c_abf2
unsw.description.publisherStatement Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS, 79(24), pp.3983-3985 and may be found at http://link.aip.org/link/?APPLAB/79/3983/1 en_US
unsw.identifier.doiPublisher http://dx.doi.org/10.1063/1.1426264 en_US
unsw.relation.faculty Science
unsw.relation.ispartofissue 24 en_US
unsw.relation.ispartofjournal Applied Physics Letters en_US
unsw.relation.ispartofpagefrompageto 3983-3985 en_US
unsw.relation.ispartofvolume 79 en_US
unsw.relation.originalPublicationAffiliation Feng, Y en_US
unsw.relation.originalPublicationAffiliation Zhao, Yong, Materials Science & Engineering, Faculty of Science, UNSW en_US
unsw.relation.originalPublicationAffiliation Sun, Y en_US
unsw.relation.originalPublicationAffiliation Liu, F.C. en_US
unsw.relation.originalPublicationAffiliation Fu, B.Q. en_US
unsw.relation.originalPublicationAffiliation Zhou, L. en_US
unsw.relation.originalPublicationAffiliation Cheng, C.H. en_US
unsw.relation.originalPublicationAffiliation Koshizuka, N en_US
unsw.relation.originalPublicationAffiliation Murakami, M en_US
unsw.relation.school School of Materials Science & Engineering *
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