Publication:
Electrostatically defined few-electron double quantum dot in silicon
Electrostatically defined few-electron double quantum dot in silicon
| dc.contributor.author | Lim, Wee Han | en_US |
| dc.contributor.author | Huebl, Hans | en_US |
| dc.contributor.author | Willems van Beveren, Laurens | en_US |
| dc.contributor.author | Rubanov, Sergey | en_US |
| dc.contributor.author | Spizzirri, Paul | en_US |
| dc.contributor.author | Angus, Susan | en_US |
| dc.contributor.author | Clark, Robert | en_US |
| dc.contributor.author | Dzurak, Andrew | en_US |
| dc.date.accessioned | 2021-11-25T13:30:26Z | |
| dc.date.available | 2021-11-25T13:30:26Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.abstract | A few-electron double quantum dot was fabricated using metal-oxide-semiconductor-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements. | en_US |
| dc.identifier.uri | http://hdl.handle.net/1959.4/39815 | |
| dc.language | English | |
| dc.language.iso | EN | en_US |
| dc.rights | CC BY-NC-ND 3.0 | en_US |
| dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/au/ | en_US |
| dc.source | Legacy MARC | en_US |
| dc.title | Electrostatically defined few-electron double quantum dot in silicon | en_US |
| dc.type | Journal Article | en |
| dcterms.accessRights | open access | |
| dspace.entity.type | Publication | en_US |
| unsw.accessRights.uri | https://purl.org/coar/access_right/c_abf2 | |
| unsw.description.publisherStatement | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, vol. 94, 173502 (2009). Permalink: http://link.aip.org/link/?APPLAB/94/173502/1 | en_US |
| unsw.identifier.doiPublisher | http://dx.doi.org/10.1063/1.3124242 | en_US |
| unsw.relation.faculty | Science | |
| unsw.relation.ispartofissue | 173502 | en_US |
| unsw.relation.ispartofjournal | Applied Physics Letters | en_US |
| unsw.relation.ispartofvolume | 94 | en_US |
| unsw.relation.originalPublicationAffiliation | Lim, Wee Han, ARC Centre of Excellence for Quantum Computer Technology, UNSW | en_US |
| unsw.relation.originalPublicationAffiliation | Huebl, Hans, ARC Centre of Excellence for Quantum Computer Technology, UNSW | en_US |
| unsw.relation.originalPublicationAffiliation | Willems van Beveren, Laurens, ARC Centre of Excellence for Quantum Computer Technology, UNSW | en_US |
| unsw.relation.originalPublicationAffiliation | Rubanov, Sergey, ARC Centre of Excellence for Quantum Computer Technology, University of Melbourne | en_US |
| unsw.relation.originalPublicationAffiliation | Spizzirri, Paul, ARC Centre of Excellence for Quantum Computer Technology, University of Melbourne | en_US |
| unsw.relation.originalPublicationAffiliation | Angus, Susan, ARC Centre of Excellence for Quantum Computer Technology, University of Melbourne | en_US |
| unsw.relation.originalPublicationAffiliation | Clark, Robert, ARC Centre of Excellence for Quantum Computer Technology, UNSW | en_US |
| unsw.relation.originalPublicationAffiliation | Dzurak, Andrew, ARC Centre of Excellence for Quantum Computer Technology, UNSW | en_US |
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