Electrostatically defined few-electron double quantum dot in silicon

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Abstract
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.
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Author(s)
Lim, Wee Han
Huebl, Hans
Willems van Beveren, Laurens
Rubanov, Sergey
Spizzirri, Paul
Angus, Susan
Clark, Robert
Dzurak, Andrew
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Publication Year
2009
Resource Type
Journal Article
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UNSW Faculty
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