Publication:
Anisotropic electronic transport properties and microstructure of GaN grown by MOCVD

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dc.contributor.author Feng, Dunping en_US
dc.contributor.author Zhao, Yong en_US
dc.contributor.author Zhang, Guangqing en_US
dc.date.accessioned 2021-11-25T13:05:24Z
dc.date.available 2021-11-25T13:05:24Z
dc.date.issued 1998 en_US
dc.identifier.uri http://hdl.handle.net/1959.4/39107
dc.language English
dc.language.iso EN en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/au/ en_US
dc.source Legacy MARC en_US
dc.title Anisotropic electronic transport properties and microstructure of GaN grown by MOCVD en_US
dc.type Conference Paper en
dcterms.accessRights metadata only access
dspace.entity.type Publication en_US
unsw.accessRights.uri http://purl.org/coar/access_right/c_14cb
unsw.publisher.place Beijing en_US
unsw.relation.faculty Science
unsw.relation.ispartofconferenceLocation Beijing, China en_US
unsw.relation.ispartofconferenceName International Topical Meeting on III-V Nitride Materials and Devices (ITMNMD 98) en_US
unsw.relation.ispartofconferenceProceedingsTitle Proceedings of International Topical Meeting on III-V Nitride Materials and Devices en_US
unsw.relation.ispartofconferenceYear 1998 en_US
unsw.relation.ispartofpagefrompageto 69-71 en_US
unsw.relation.originalPublicationAffiliation Feng, Dunping, Materials Science & Engineering, Faculty of Science, UNSW en_US
unsw.relation.originalPublicationAffiliation Zhao, Yong, Materials Science & Engineering, Faculty of Science, UNSW en_US
unsw.relation.originalPublicationAffiliation Zhang, Guangqing, Materials Science & Engineering, Faculty of Science, UNSW en_US
unsw.relation.school School of Materials Science & Engineering *
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