Abstract
An accurate numerical model is established for the simulation of buried contact cells in two dimensions. The physical parameters and the approximations are discussed as well as the procedures that lead to the foundations of the model. The model is applied to bifacial cells with three different rear surface configurations: (A) passivated by a thermally grown oxide, (B) by a dopand-induced floating junction, and (C) with a contacted junction. Especially when the cell is situated in a light-concentrating roof tile, configuration C performes far better than A and B. The two-dimensional effects of resistive losses in the semiconductor region of the cell are also discussed