Publication:
The influence of a new bandgap narrowing model on measurements of the intrinsic carrier density in crystalline silicon

Simple item page
dc.contributor.author Altermatt, Peter en_US
dc.contributor.author Heiser, Gernot en_US
dc.contributor.author Green, Martin en_US
dc.date.accessioned 2021-11-25T13:31:17Z
dc.date.available 2021-11-25T13:31:17Z
dc.date.issued 1999 en_US
dc.identifier.uri http://hdl.handle.net/1959.4/39874
dc.language English
dc.language.iso EN en_US
dc.publisher International PVSEC-11 en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/au/ en_US
dc.source Legacy MARC en_US
dc.title The influence of a new bandgap narrowing model on measurements of the intrinsic carrier density in crystalline silicon en_US
dc.type Conference Paper en
dcterms.accessRights metadata only access
dspace.entity.type Publication en_US
unsw.accessRights.uri http://purl.org/coar/access_right/c_14cb
unsw.publisher.place Tokyo, Japan en_US
unsw.relation.faculty Engineering
unsw.relation.ispartofconferenceLocation Hokkaido, Japan en_US
unsw.relation.ispartofconferenceName 11th International photovoltaic science and engineering conference en_US
unsw.relation.ispartofconferenceProceedingsTitle Technical Digest, 11th International Photovoltaic Science and Engineering Conference en_US
unsw.relation.ispartofconferenceYear 1999 en_US
unsw.relation.ispartofpagefrompageto 719-720 en_US
unsw.relation.originalPublicationAffiliation Altermatt, Peter, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW en_US
unsw.relation.originalPublicationAffiliation Heiser, Gernot, Computer Science & Engineering, Faculty of Engineering, UNSW en_US
unsw.relation.originalPublicationAffiliation Green, Martin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW en_US
unsw.relation.school School of Photovoltaic and Renewable Energy Engineering *
unsw.relation.school School of Computer Science and Engineering *
Files
Resource type
Conference Paper