Publication:
Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime
Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime
dc.contributor.author | Willems van Beveren, Laurens Henry | en_US |
dc.contributor.author | Tan, Kuan | en_US |
dc.contributor.author | Lai, Nai Shyan | en_US |
dc.contributor.author | Dzurak, Andrew | en_US |
dc.contributor.author | Hamilton, Alex | en_US |
dc.date.accessioned | 2021-11-25T16:32:41Z | |
dc.date.available | 2021-11-25T16:32:41Z | |
dc.date.issued | 2010 | en_US |
dc.description.abstract | We report the fabrication and study of Hall bar field-effect transistors in which an overlapping-gate architecture allows four-terminal measurements of low-density two-dimensional electron systems while maintaining a high density at the Ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduced peak mobility. We also observe a voltage threshold shift which we attribute to negative oxide charge, injected during electron-beam lithography processing. | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://hdl.handle.net/1959.4/45542 | |
dc.language | English | |
dc.language.iso | EN | en_US |
dc.rights | CC BY-NC-ND 3.0 | en_US |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/au/ | en_US |
dc.source | Legacy MARC | en_US |
dc.subject.other | Hall effect devices | en_US |
dc.subject.other | electron beam lithography | en_US |
dc.subject.other | elemental semiconductors | en_US |
dc.subject.other | MOSFET | en_US |
dc.subject.other | ohmic contacts | en_US |
dc.subject.other | silicon | en_US |
dc.subject.other | two-dimensional electron gas | en_US |
dc.title | Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime | en_US |
dc.type | Journal Article | en |
dcterms.accessRights | open access | |
dspace.entity.type | Publication | en_US |
unsw.accessRights.uri | https://purl.org/coar/access_right/c_abf2 | |
unsw.description.notePublic | Published version: http://link.aip.org/link/APPLAB/v97/i15/p152102/s1 | en_US |
unsw.description.publisherStatement | Copyright 2010 American Institute of Physics. | en_US |
unsw.identifier.doiPublisher | http://dx.doi.org/10.1063/1.3501136 | en_US |
unsw.relation.faculty | Science | |
unsw.relation.ispartofissue | 15 | en_US |
unsw.relation.ispartofjournal | Applied Physics Letters | en_US |
unsw.relation.ispartofpagefrompageto | 152102-1-152102-3 | en_US |
unsw.relation.ispartofvolume | 97 | en_US |
unsw.relation.originalPublicationAffiliation | Willems van Beveren, Laurens Henry, ARC Centre of Excellence for Quantum Computer Technology, Faculty of Science, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Tan, Kuan, ARC Centre of Excellence for Quantum Computer Technology, Faculty of Science, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Lai, Nai Shyan, ARC Centre of Excellence for Quantum Computer Technology, Faculty of Science, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Dzurak, Andrew, ARC Centre of Excellence for Quantum Computer Technology, Faculty of Science, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Hamilton, Alex, Physics, Faculty of Science, UNSW | en_US |
unsw.relation.school | Centre for Quantum Computation & Communication Technology | * |
unsw.relation.school | School of Physics | * |
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