Improvement of critical current density in MgB2 by Ti, Zr and Hf doping Goto, D en_US Machi, T en_US Zhao, Yong en_US Koshizuka, N en_US Murakami, M en_US Arai, S en_US 2021-11-25T13:03:42Z 2021-11-25T13:03:42Z 2003 en_US
dc.description.abstract Ti, Zr and Hf doped MgB2 polycrystalline samples have been prepared by using a hot pressing technique. In Ti doped MgB2, it was found that the optimum concentration of Ti for the critical current density Jc was 5% and Jc value was improved from 1.9 x 10(5) A/cm2 (Ti 0%) to 5.6 x 10(5) A/cm2 (Ti 5%) in self-field at 10 K. Jc values were also improved to 5.0 x 10(5) A/cm2 with 2% Zr doping and to 4.8 x 10(5) A/cm2 with 1% Hf doping. We found that the improvement of the irreversibility field Birr with Zr and Hf doping was larger than that of Ti doping. en_US
dc.identifier.issn 0921-4534 en_US
dc.language English
dc.language.iso EN en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri en_US
dc.source Legacy MARC en_US
dc.title Improvement of critical current density in MgB2 by Ti, Zr and Hf doping en_US
dc.type Journal Article en
dcterms.accessRights metadata only access
dspace.entity.type Publication en_US
unsw.identifier.doiPublisher en_US
unsw.relation.faculty Science
unsw.relation.ispartofjournal Physica C en_US
unsw.relation.ispartofpagefrompageto 272-275 en_US
unsw.relation.ispartofvolume 392 en_US
unsw.relation.originalPublicationAffiliation Goto, D en_US
unsw.relation.originalPublicationAffiliation Machi, T en_US
unsw.relation.originalPublicationAffiliation Zhao, Yong, Materials Science & Engineering, Faculty of Science, UNSW en_US
unsw.relation.originalPublicationAffiliation Koshizuka, N en_US
unsw.relation.originalPublicationAffiliation Murakami, M en_US
unsw.relation.originalPublicationAffiliation Arai, S en_US School of Materials Science & Engineering *
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