Publication:
Re-crystallisation of Amorphous Silicon in the Production of Low Defect Density Silicon on Sapphire Thin Films
Re-crystallisation of Amorphous Silicon in the Production of Low Defect Density Silicon on Sapphire Thin Films
| dc.contributor.author | McKenzie, Warren | en_US |
| dc.contributor.author | Domyo, Hiroshi | en_US |
| dc.contributor.author | Ho, Tran | en_US |
| dc.contributor.author | Munroe, Paul | en_US |
| dc.date.accessioned | 2021-11-25T15:30:59Z | |
| dc.date.available | 2021-11-25T15:30:59Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | (100) silicon thin films grown on (1ī02) sapphire substrates is the most significant of the silicon-on-insulator technologies and has been used for many years in the production of integrated circuits. This paper presents a TEM study of the evolution of crystalline defects during the heat treatments designed to improve the quality of the films. Planar defects were found to be isolated to the outer surface of the films, whilst dislocations were abundant throughout. Defect density was considerably reduced by annealing at higher temperatures. | en_US |
| dc.identifier.uri | http://hdl.handle.net/1959.4/44667 | |
| dc.language | English | |
| dc.language.iso | EN | en_US |
| dc.rights | CC BY-NC-ND 3.0 | en_US |
| dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/au/ | en_US |
| dc.source | Legacy MARC | en_US |
| dc.subject.other | defects | en_US |
| dc.subject.other | silicon on insulator | en_US |
| dc.subject.other | TEM | en_US |
| dc.subject.other | silicon on sapphire | en_US |
| dc.subject.other | SOS | en_US |
| dc.title | Re-crystallisation of Amorphous Silicon in the Production of Low Defect Density Silicon on Sapphire Thin Films | en_US |
| dc.type | Conference Paper | en |
| dcterms.accessRights | metadata only access | |
| dspace.entity.type | Publication | en_US |
| unsw.accessRights.uri | http://purl.org/coar/access_right/c_14cb | |
| unsw.description.publisherStatement | Copyright © 2005 Microscopy Society of America | en_US |
| unsw.identifier.doiPublisher | http://dx.doi.org/10.1017/S1431927605500503 | en_US |
| unsw.relation.faculty | Science | |
| unsw.relation.ispartofconferenceLocation | Honolulu, Hawaii, USA | en_US |
| unsw.relation.ispartofconferenceName | Microscopy and Microanalysis | en_US |
| unsw.relation.ispartofconferenceProceedingsTitle | Microscopy and Microanalysis (2005), 11(Suppl 2):2088-2089 | en_US |
| unsw.relation.ispartofconferenceYear | 2005 | en_US |
| unsw.relation.originalPublicationAffiliation | McKenzie, Warren, Materials Science & Engineering, Faculty of Science, UNSW | en_US |
| unsw.relation.originalPublicationAffiliation | Domyo, Hiroshi | en_US |
| unsw.relation.originalPublicationAffiliation | Ho, Tran | en_US |
| unsw.relation.originalPublicationAffiliation | Munroe, Paul, Materials Science & Engineering, Faculty of Science, UNSW | en_US |
| unsw.relation.school | School of Materials Science & Engineering | * |