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TEM characterisation of GdN thin films
TEM characterisation of GdN thin films
dc.contributor.author | McKenzie, Warren | en_US |
dc.contributor.author | Munroe, Paul | en_US |
dc.contributor.author | Budde, Felix | en_US |
dc.contributor.author | Ruck, Ben | en_US |
dc.contributor.author | Granville, Simon | en_US |
dc.contributor.author | Trodahl, Joe | en_US |
dc.date.accessioned | 2021-11-25T15:31:19Z | |
dc.date.available | 2021-11-25T15:31:19Z | |
dc.date.issued | 2006 | en_US |
dc.description.abstract | The rare-earth metal nitrides have been predicted to possess a wide range of electronic structures, ranging from ferromagnetic to halfmetallic to semiconducting, which makes these materials attractive for a range of applications. In this study, GdN thin films were grown at room temperature on silicon and glass quartz substrates by thermally evaporating gadolinium metal in nitrogen atmospheres. A detailed microstructural characterisation of these films was carried out using a variety of techniques such as transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectrometry. TEM analysis indicated the films are nano-crystalline, with crystallite sizes being affected by the ionisation state of the nitrogen atmosphere used. Sources of the films’ internal stress were discussed with a significant amount of oxygen absorption, identified by RBS, being a probable cause. Electron diffraction and energy dispersive X-ray studies found that GdN was the only phase present with oxygen uniformly distributed throughout the film. | en_US |
dc.identifier.uri | http://hdl.handle.net/1959.4/44672 | |
dc.language | English | |
dc.language.iso | EN | en_US |
dc.rights | CC BY-NC-ND 3.0 | en_US |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/au/ | en_US |
dc.source | Legacy MARC | en_US |
dc.subject.other | Thin film | en_US |
dc.subject.other | GdN | en_US |
dc.subject.other | Gadolinium nitride | en_US |
dc.subject.other | TEM | en_US |
dc.subject.other | FIB | en_US |
dc.title | TEM characterisation of GdN thin films | en_US |
dc.type | Journal Article | en |
dcterms.accessRights | open access | |
dspace.entity.type | Publication | en_US |
unsw.accessRights.uri | https://purl.org/coar/access_right/c_abf2 | |
unsw.description.publisherStatement | Published version available at: www.sciencedirect.com | en_US |
unsw.identifier.doiPublisher | http://dx.doi.org/10.1016/j.cap.2005.11.029 | en_US |
unsw.relation.faculty | Science | |
unsw.relation.ispartofissue | 3 | en_US |
unsw.relation.ispartofjournal | Current Applied Physics | en_US |
unsw.relation.ispartofpagefrompageto | 407-410 | en_US |
unsw.relation.ispartofvolume | 6 | en_US |
unsw.relation.originalPublicationAffiliation | McKenzie, Warren, Materials Science & Engineering, Faculty of Science, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Munroe, Paul, Materials Science & Engineering, Faculty of Science, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Budde, Felix, Victoria University of Wellington | en_US |
unsw.relation.originalPublicationAffiliation | Ruck, Ben, Victoria University of Wellington | en_US |
unsw.relation.originalPublicationAffiliation | Granville, Simon, Victoria University of Wellington | en_US |
unsw.relation.originalPublicationAffiliation | Trodahl, Joe, Victoria University of Wellington | en_US |
unsw.relation.school | School of Materials Science & Engineering | * |
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