Publication:
Fabrication and electrical characteristics of Si nanocrystal/c-Si heterojunctions

dc.contributor.author Song, Dengyuan en_US
dc.contributor.author Cho, E.-C en_US
dc.contributor.author Conibeer, Gavin en_US
dc.contributor.author Huang, Yidan en_US
dc.contributor.author Green, Martin en_US
dc.date.accessioned 2021-11-25T13:29:50Z
dc.date.available 2021-11-25T13:29:50Z
dc.date.issued 2007 en_US
dc.description.abstract Heterojunctions HJs were fabricated from p-type Si nanocrystals Si NCs embedded in a SiC matrix on an n-type crystalline Si substrate. Transmission electron microscopy revealed that Si NCs are clearly established, with sizes in the range of 3-5 nm. The HJ diodes showed a good rectification ratio of 1.0 104 at ±1.0 V at 298 K. The ideality factor, junction built-in potential, and open-circuit voltage are 1.24, 0.72 V, and 0.48 V, respectively. Measurement of temperature-dependent I-V curves in forward conduction suggests that, in the medium voltage range, junction interface recombination can be described as the dominant current transport mechanism. en_US
dc.identifier.issn 0003-6951 en_US
dc.identifier.uri http://hdl.handle.net/1959.4/39734
dc.language English
dc.language.iso EN en_US
dc.rights CC BY-NC-ND 3.0 en_US
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/au/ en_US
dc.source Legacy MARC en_US
dc.subject.other Nanocrystals en_US
dc.subject.other Crystalline materials en_US
dc.subject.other Electric properties en_US
dc.subject.other Heterojunctions en_US
dc.subject.other Silicon carbide en_US
dc.subject.other Temperature measurement en_US
dc.subject.other Transmission electron microscopy en_US
dc.title Fabrication and electrical characteristics of Si nanocrystal/c-Si heterojunctions en_US
dc.type Journal Article en
dcterms.accessRights open access
dspace.entity.type Publication en_US
unsw.accessRights.uri https://purl.org/coar/access_right/c_abf2
unsw.description.publisherStatement Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 91, 123510 (2007) and may be found at: http://link.aip.org/link/?APPLAB/91/123510/1 en_US
unsw.identifier.doiPublisher http://dx.doi.org/10.1063/1.2787883 en_US
unsw.relation.faculty Engineering
unsw.relation.ispartofissue 12 en_US
unsw.relation.ispartofjournal Applied Physics Letters en_US
unsw.relation.ispartofpagefrompageto 123510 en_US
unsw.relation.ispartofvolume 91 en_US
unsw.relation.originalPublicationAffiliation Song, Dengyuan, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW en_US
unsw.relation.originalPublicationAffiliation Cho, E.-C, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW en_US
unsw.relation.originalPublicationAffiliation Conibeer, Gavin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW en_US
unsw.relation.originalPublicationAffiliation Huang, Yidan, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW en_US
unsw.relation.originalPublicationAffiliation Green, Martin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW en_US
unsw.relation.school School of Photovoltaic and Renewable Energy Engineering *
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