Publication:
Fabrication and electrical characteristics of Si nanocrystal/c-Si heterojunctions
Fabrication and electrical characteristics of Si nanocrystal/c-Si heterojunctions
dc.contributor.author | Song, Dengyuan | en_US |
dc.contributor.author | Cho, E.-C | en_US |
dc.contributor.author | Conibeer, Gavin | en_US |
dc.contributor.author | Huang, Yidan | en_US |
dc.contributor.author | Green, Martin | en_US |
dc.date.accessioned | 2021-11-25T13:29:50Z | |
dc.date.available | 2021-11-25T13:29:50Z | |
dc.date.issued | 2007 | en_US |
dc.description.abstract | Heterojunctions HJs were fabricated from p-type Si nanocrystals Si NCs embedded in a SiC matrix on an n-type crystalline Si substrate. Transmission electron microscopy revealed that Si NCs are clearly established, with sizes in the range of 3-5 nm. The HJ diodes showed a good rectification ratio of 1.0 104 at ±1.0 V at 298 K. The ideality factor, junction built-in potential, and open-circuit voltage are 1.24, 0.72 V, and 0.48 V, respectively. Measurement of temperature-dependent I-V curves in forward conduction suggests that, in the medium voltage range, junction interface recombination can be described as the dominant current transport mechanism. | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://hdl.handle.net/1959.4/39734 | |
dc.language | English | |
dc.language.iso | EN | en_US |
dc.rights | CC BY-NC-ND 3.0 | en_US |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/au/ | en_US |
dc.source | Legacy MARC | en_US |
dc.subject.other | Nanocrystals | en_US |
dc.subject.other | Crystalline materials | en_US |
dc.subject.other | Electric properties | en_US |
dc.subject.other | Heterojunctions | en_US |
dc.subject.other | Silicon carbide | en_US |
dc.subject.other | Temperature measurement | en_US |
dc.subject.other | Transmission electron microscopy | en_US |
dc.title | Fabrication and electrical characteristics of Si nanocrystal/c-Si heterojunctions | en_US |
dc.type | Journal Article | en |
dcterms.accessRights | open access | |
dspace.entity.type | Publication | en_US |
unsw.accessRights.uri | https://purl.org/coar/access_right/c_abf2 | |
unsw.description.publisherStatement | Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 91, 123510 (2007) and may be found at: http://link.aip.org/link/?APPLAB/91/123510/1 | en_US |
unsw.identifier.doiPublisher | http://dx.doi.org/10.1063/1.2787883 | en_US |
unsw.relation.faculty | Engineering | |
unsw.relation.ispartofissue | 12 | en_US |
unsw.relation.ispartofjournal | Applied Physics Letters | en_US |
unsw.relation.ispartofpagefrompageto | 123510 | en_US |
unsw.relation.ispartofvolume | 91 | en_US |
unsw.relation.originalPublicationAffiliation | Song, Dengyuan, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Cho, E.-C, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Conibeer, Gavin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Huang, Yidan, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW | en_US |
unsw.relation.originalPublicationAffiliation | Green, Martin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW | en_US |
unsw.relation.school | School of Photovoltaic and Renewable Energy Engineering | * |
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