Fabrication and electrical characteristics of Si nanocrystal/c-Si heterojunctions

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Abstract
Heterojunctions HJs were fabricated from p-type Si nanocrystals Si NCs embedded in a SiC matrix on an n-type crystalline Si substrate. Transmission electron microscopy revealed that Si NCs are clearly established, with sizes in the range of 3-5 nm. The HJ diodes showed a good rectification ratio of 1.0 104 at ±1.0 V at 298 K. The ideality factor, junction built-in potential, and open-circuit voltage are 1.24, 0.72 V, and 0.48 V, respectively. Measurement of temperature-dependent I-V curves in forward conduction suggests that, in the medium voltage range, junction interface recombination can be described as the dominant current transport mechanism.
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Author(s)
Song, Dengyuan
Cho, E.-C
Conibeer, Gavin
Huang, Yidan
Green, Martin
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Publication Year
2007
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Journal Article
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UNSW Faculty
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download 2007 Song et al APL(91 issue 12 123510 2007).pdf 473.3 KB Adobe Portable Document Format
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