Abstract
Heterojunctions HJs were fabricated from p-type Si nanocrystals Si NCs embedded in a SiC matrix on an n-type crystalline Si substrate. Transmission electron microscopy revealed that Si NCs are clearly established, with sizes in the range of 3-5 nm. The HJ diodes showed a good rectification ratio of 1.0 104 at ±1.0 V at 298 K. The ideality factor, junction built-in potential, and open-circuit voltage are 1.24, 0.72 V, and 0.48 V, respectively. Measurement of temperature-dependent I-V curves in forward conduction suggests that, in the medium voltage range, junction interface recombination can be described as the dominant current transport mechanism.