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  • Grain boundary modelling and characterization of thin-film silicon solar cell
    (1996) Sproul, Alistair; Edminston, Sean; Puzzer, Tom; Heiser, Gernot; Wenham, Stuart; Green, Martin; Young, Timothy
    Conference Paper
    An analytical model is developed to decribe recombination currents arising from recombination at grain boundaries (GBs) in the depletion region of a p-n junction solar cell. Grain boundaries are modelled as having a single energy evel in the energy gap, and partial occupancy of these stats gives raise to a chage on the GB. The analytical model is compared to a complete numerical simulation package (DESSIS) and found to be in excellent agreement. Additionally,. cross sectional EBIC images of a multilayer device containing vertical GBs are presented. The experimental data is comared qualitatively with results derived from numerical modelling.