Engineering
Engineering
123 results
Filters
Availability

Publication Year

Resource Type

Publication Search Results
Sort
Results per page
Now showing
1 - 10 of 123
-
(1999) Corkish, Richard; Altermatt , Pietro P.; Heiser, GernotConference Paper
-
(1999) Schumacher, J; Altermatt, Pietro P.; Heiser, Gernot; Aberle, Armin G.Conference Paper
-
(1999) Deller, L; Heiser, GernotConference PaperLinking and loading are the final steps in preparing a program for execution. This paper assesses issues concerning dynamic and static linking in traditional as well as single-address-space operating systems (SASOS). Related loading issues are also addressed. We present the dynamic linking model implemented in the Mungi SASOS and discuss its strengths and limitations. Benchmarking shows that dynamic linking in Mungi carries less overhead than dynamic linking in SGI`s Irix operating system
-
(1999) Schumacher, J; Altermatt, Peter; Heiser, Gernot; Aberle, ArminConference Paper
-
(1999) Altermatt, Peter; Sinton, Ron; Heiser, GernotConference Paper
-
(1999) Altermatt, Peter; Heiser, Gernot; Green, MartinConference Paper
-
(1998) Corkish, Richard; Sproul, Alistair; Puzzer, Tom; Altermatt, Peter; Heiser, Gernot; Luke, KeungConference Paper
-
(1997) Altermatt, Pietro; Heiser, Gernot; Kiesewetter, Tobias; McIntosh, Keith; Honsberg, Christiana; Wenham, Stuart; Green, MartinConference PaperAn accurate numerical model is established for the simulation of buried contact cells in two dimensions. The physical parameters and the approximations are discussed as well as the procedures that lead to the foundations of the model. The model is applied to bifacial cells with three different rear surface configurations: (A) passivated by a thermally grown oxide, (B) by a dopand-induced floating junction, and (C) with a contacted junction. Especially when the cell is situated in a light-concentrating roof tile, configuration C performes far better than A and B. The two-dimensional effects of resistive losses in the semiconductor region of the cell are also discussed
-
(1997) Kuhlman, Burhard; Grauvogi, Manfred; Meyer, R; Hezel, Rudolf; Heiser, Gernot; Aberle, ArminConference Paper
-
(1997) Kuhlmann, Burhard; Aberle, Armin; Hezel, Rudolf; Heiser, GernotConference PaperThe Al/SiOx/p-Si MIS tunnel contact is an essential part of metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells. We experimentally determined the recombination properties (saturation current density J0 and ideality factor n) of the MIS contact in MIS-IL silicon solar cells fabricated at ISFH. Based on these measurements, it has been possible to resolve the contribution of the MIS contact to the total recombination losses in 1-sun illuminated MIS-IL solar cells by means of 2D numerical modeling. Furthermore, a 2D numerical optimization study is performed where the optimum width of the MIS contact fingers of advanced MIS-IL silicon solar cells is determined