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(2001)Journal ArticleThree-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical silicon grain boundary are demonstrated. They are compared with an analytical model which excludes the effect of carrier generation other than in the bulk base region of a solar cell structure. We demonstrate that in a wide range of solar cell structures recombination in the space charge region (SCR) significantly affects the EBIC results and hence needs to be included in the data evaluation. Apart from these findings, simulations of a realistic silicon solar cell structure (thick emitter, field-dependent mobility, etc.) are demonstrated.
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(1998)Journal ArticleThe first results obtained using a SOI device for microdosimetry applications are presented. Microbeam and broadbeam spectroscopy methods are used for determining minority carrier lifetime and radiation damage constants. A spectroscopy model is presented which includes the majority of effects that impact spectral resolution. Charge collection statistics were found to substantially affect spectral resolution. Lateral diffusion effects significantly complicate charge collection
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(1995)Conference PaperThis paper describes the use of three-dimensional (3D) device modelling for the optimisation of the rear contact geometry of high-efficiency silicon solar cells. We describe the techniques and models used as well as their limitations. Our approach is contrasted with previously published 3D studies of high-efficiency silicon solar cells. Results show that the optimum spacing is about 2/3 of that predicted by 2D simulations, and exhibits a much stronger dependence on contact spacing. The optimal value found is about 60% of that of the present UNSW PERL cells, however, the possible efficiency gain is only about 0.1% absolute.
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