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Numerical simulation of electron-beam-induced current near a silicon grain boundary and impact of a p-n junction space charge region(2001) Corkish, Richard; Altermatt, Pietro P.; Heiser, GernotJournal ArticleThree-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical silicon grain boundary are demonstrated. They are compared with an analytical model which excludes the effect of carrier generation other than in the bulk base region of a solar cell structure. We demonstrate that in a wide range of solar cell structures recombination in the space charge region (SCR) significantly affects the EBIC results and hence needs to be included in the data evaluation. Apart from these findings, simulations of a realistic silicon solar cell structure (thick emitter, field-dependent mobility, etc.) are demonstrated.
(1998) Bradley, Peter; Rozenfeld, Anatoly; Lee, Kevin; Jamieson, Dana; Heiser, Gernot; Satoh, SJournal ArticleThe first results obtained using a SOI device for microdosimetry applications are presented. Microbeam and broadbeam spectroscopy methods are used for determining minority carrier lifetime and radiation damage constants. A spectroscopy model is presented which includes the majority of effects that impact spectral resolution. Charge collection statistics were found to substantially affect spectral resolution. Lateral diffusion effects significantly complicate charge collection
(2000) Cotera, Angela; Simpson, John; Erickson, E; Colgan, Sean; Burton, Michael; Allen, DavidJournal Article