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  • (2010) Willems van Beveren, Laurens Henry; Tan, Kuan; Lai, Nai Shyan; Dzurak, Andrew; Hamilton, Alex
    Journal Article
    We report the fabrication and study of Hall bar field-effect transistors in which an overlapping-gate architecture allows four-terminal measurements of low-density two-dimensional electron systems while maintaining a high density at the Ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduced peak mobility. We also observe a voltage threshold shift which we attribute to negative oxide charge, injected during electron-beam lithography processing.