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  • Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime
    (2010) Willems van Beveren, Laurens Henry; Tan, Kuan; Lai, Nai Shyan; Dzurak, Andrew; Hamilton, Alex
    Journal Article
    We report the fabrication and study of Hall bar field-effect transistors in which an overlapping-gate architecture allows four-terminal measurements of low-density two-dimensional electron systems while maintaining a high density at the Ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduced peak mobility. We also observe a voltage threshold shift which we attribute to negative oxide charge, injected during electron-beam lithography processing.
  • Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs
    (2010) Willems van Beveren, Laurens; Huebl, H.; Starrett, Robert; Morello, Andrea
    Conference Paper
    We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals.