Science

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Now showing 1 - 10 of 33
  • (1998) Corkish, Richard; Sproul, Alistair; Puzzer, Tom; Altermatt, Peter; Heiser, Gernot; Luke, Keung
    Conference Paper

  • (1998) Bradley, Peter; Rozenfeld, Anatoly; Lee, Kevin; Jamieson, Dana; Heiser, Gernot; Satoh, S
    Journal Article
    The first results obtained using a SOI device for microdosimetry applications are presented. Microbeam and broadbeam spectroscopy methods are used for determining minority carrier lifetime and radiation damage constants. A spectroscopy model is presented which includes the majority of effects that impact spectral resolution. Charge collection statistics were found to substantially affect spectral resolution. Lateral diffusion effects significantly complicate charge collection

  • (1997) Corkish, Richard; Puzzer, Tom; Sproul, Alistair; Luke, Keung; Heiser, Gernot
    Conference Paper

  • (1996) Sproul, Alistair; Edminston, Sean; Puzzer, Tom; Heiser, Gernot; Wenham, Stuart; Green, Martin; Young, Timothy
    Conference Paper
    An analytical model is developed to decribe recombination currents arising from recombination at grain boundaries (GBs) in the depletion region of a p-n junction solar cell. Grain boundaries are modelled as having a single energy evel in the energy gap, and partial occupancy of these stats gives raise to a chage on the GB. The analytical model is compared to a complete numerical simulation package (DESSIS) and found to be in excellent agreement. Additionally,. cross sectional EBIC images of a multilayer device containing vertical GBs are presented. The experimental data is comared qualitatively with results derived from numerical modelling.

  • (1996) Altermatt, Peter; Heiser, Gernot; Dai, Ximing; Jurgens, J; Aberle, Armin; Robinson, Steven J.; Young, Timothy; Wenham, Stuart; Green, Martin
    Journal Article
    The passivated emitter, rear locally diffused (PERL) cells, fabricated in our laboratory, reach an efficiency of 24.0%, the highest value for any silicon-based solar cell under terrestrial illumination. In an attempt to improve the rear surface passivation, which is usually obtained by a thermally grown oxide, we add a floating (i.e., noncontacted) p-n junction at the rear surface, resulting in the passivated emitter, rear floating p-n junction (PERF) cell design. Although these cells exhibit record 1-sun open-circuit voltages of up to 720 mV, their efficiency is degraded by nonlinearities ("shoulders") in the logarithmic I-V curves. In order to understand and manipulate such nonlinearities, this paper presents a detailed investigation of the internal operation of PERF cells by means of numerical modelling based on experimentally determined device parameters. From the model, we derive design rules for optimum cell performance and develop a generalized argumentation that is suitable to compare the passivation properties of different surface structures. For example, the oxidized rear surface of the PERL cell is treated as an electrostatically induced floating junction in this approach and analogies to the diffused floating p-n junction are drawn. Our simulations indicate that optimum rear surface passivation can be obtained in three different ways. (i) The floating junction of the PERF cell should be very lightly doped, resulting in a sheet resistivity of 5000 Omega/[D'Alembertian], and losses due to shunt leaking paths between the p-n junction and the rear metal contacts must be avoided. (ii) The rear surface of the PERL cell should be passivated by chemical vapor deposition of a silicon nitride film containing a larger positive interface charge density than exists in thermally grown oxides. (iii) An external gate can be added at the rear with low leakage currents and gate voltages of around 15 V.

  • (2000) Bandyopadhyay, Srikanta; Sowmya, Arcot; Maulik, Ujjwal
    Conference Paper

  • (2000) Teoh, C; Sowmya, Arcot; Bandyopadhyay, Srikanta
    Conference Paper

  • (2000) Cotera, Angela; Simpson, John; Erickson, E; Colgan, Sean; Burton, Michael; Allen, David
    Journal Article

  • (2008) Meiser, Bettina; Kasparian, Nadine; Mitchell, Penny; Strong, Kathryn; Simpson, John; Tabassum, Laila; Mireskandari, Shab; Schofield, Peter
    Journal Article
    Objectives: This study assesses interest in genetic testing for gene variations associated with bipolar disorder and associated information needs. Methods: Two hundred individuals (95 unaffected and 105 affected with either bipolar disorder, schizoaffective disorder-manic type, or recurrent major depression) from families with multiple cases of bipolar disorder were assessed, using mailed, self-administered questionnaires. Results: The percentage of participants reporting interest in genetic testing was associated with the degree of certainty with which any test would indicate the development of bipolar disorder. Interest in genetic testing, given a 25% lifetime risk scenario, was lowest (with 77% of participants indicating interest), and highest for the 100% lifetime risk scenario (92%). Eighty percent of participants indicated interest in genetic testing of their own children; of these 30% reported wanting their children tested at birth, and 33% in early childhood. Forty-one percent of participants reported that they would be interested in preimplantation genetic diagnosis, and 54% in prenatal testing. Limitations: The possibility of ascertainment bias cannot be ruled out. Interest in hypothetical genetic testing for bipolar disorder may not necessarily translate into actual utilization. Conclusions: These results indicate that uptake of genetic testing for genotyping for low-risk alleles related to bipolar disorder is likely to be lower than for testing for high-penetrance gene mutations that follow Mendelian inheritance. The discrepancy between the desired age of testing children and the accepted current practice may be a source of distress and conflict for parents and health professionals alike.

  • (1998) Gu, Genda; Han, Shaowei; Lin, Zheng; Zhao, Yong; Russell, Graeme
    Journal Article