Dataset:
Data for "Thermal Processes and their Impact on Surface Related Degradation"
Data for "Thermal Processes and their Impact on Surface Related Degradation"
| dc.date.accessioned | 2021-11-26T10:08:41Z | |
| dc.date.available | 2021-11-26T10:08:41Z | |
| dc.date.issued | 2021 | en_US |
| dc.description.abstract | Photoconductance carrier lifetime measurements for the paper "Thermal Processes and their Impact on Surface Related Degradation" published in physica status solidi - rapid research letters | en_US |
| dc.identifier.uri | http://hdl.handle.net/1959.4/resource/collection/resdatac_1254/1 | |
| dc.language | English | |
| dc.language.iso | EN | en_US |
| dc.rights | CC-BY | |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | en_US |
| dc.subject.other | Silicon | en_US |
| dc.subject.other | Photovoltaics | en_US |
| dc.subject.other | Degradation | en_US |
| dc.subject.other | Surface Passivation | en_US |
| dc.subject.other | Defect Engineering | en_US |
| dc.title | Data for "Thermal Processes and their Impact on Surface Related Degradation" | en_US |
| dc.type | Dataset | en_US |
| dcterms.accessRights | open access | |
| dcterms.accrualMethod | 156×156 mm 1.6 cm boron doped p-type Czochralski silicon wafers were used. The wafers were textured in a KOH/IPA solution to remove saw damage and texture both surfaces. They were then given an RCA2 clean followed by a HF dip to remove any native oxide before dielectric deposition.All dielectric depositions were carried out in a Meyer Burger MAiA remote PECVD tool. Half of the wafers (Groups 1,2,5) were coated with SiNX:H at a set point of 400oC, with a target thickness of 75 nm and refactive index (RI) of 2.08. The other wafers (Groups 3,4,6) were coated with an AlOX:H/SiNX:H stack. The AlOX:H layer was deposited at a set point of 400oC with a target thickness of 24 nm and RI of 1.588, while the SiNX:H layer was deposited at a set point of 350oC with a target thickness of 80 nm and RI of 2.08. The dielectric deposition parameters match those used in a previous study, which demonstrated no significant SRD without firing.[18]All wafers were fired in a Meyer Burger Camini belt firing furnace with a peak firing set temperature of 855oC. The dielectric layers of wafers from Groups 2,3,5 and 6 were then stripped in a HF solution. Groups 2 and 3 were then re-coated with a SiNX:H layer, while groups 5 and 6 had a fresh AlOX:H/SiNX:H stack deposited. In both cases deposition parameters were identical to those used initially.Wafers were then laser cleaved into 52×52 mm lifetime samples for annealing and light soaking. A hotplate was used to anneal samples from each group at temperatures of 300, 350 and 400oC for 5 or 30 minutes in the dark. Annealed and non-annealed samples were then light soaked in a GSola GCD-4 LID Test chamber at 150oC under 1 sun equivalent illumination.The injection dependent effective carrier lifetime was measured ex-situ throughout light soaking using a Sinton Instruments WCT-120 lifetime tester. MThe measurements were taken with the 1/1 flash and analysed using the generalized method.[25] In order to allow a reasonable comparison between structures with differing initial lifetimes the concept of lifetime equivalent defect density (∆N_leq), also known as normalized defect density,[26] is used:∆N_leq=1/τ_eff -1/τ_(eff.initial)In this work τ_(eff.initial) is taken to be the highest effective lifetime measured either before or during light soaking. In the case of samples passivated with SiNX:H this occurred within the first 2 hours of light soaking, whereas for samples passivated with AlOX:H/SiNX:H stacks the situation was more complicated. Because SRD has the greatest effect on effective lifetime at high injection levels, and to avoid trapping effects, ∆N_leq was calculated at a minority carrier density (MCD) of 1×1016 cm-3 in this work. | en_US |
| dcterms.rightsHolder | Copyright 2021, University of New South Wales | en_US |
| dspace.entity.type | Dataset | en_US |
| unsw.accessRights.uri | https://purl.org/coar/access_right/c_abf2 | |
| unsw.contributor.researchDataCreator | Hamer, Phillip | en_US |
| unsw.contributor.researchDataCreator | Chen, Daniel | en_US |
| unsw.contributor.researchDataCreator | Bonilla, Ruy S. | en_US |
| unsw.description.storageplace | School of Photovoltaic and Renewable Energy Engineering, Faculty of Engineering, UNSW | en_US |
| unsw.identifier.doi | https://doi.org/10.26190/p2xp-6x55 | en_US |
| unsw.isPublicationRelatedToDataset | Computational study of perovskite redox materials for solar thermal ammonia synthesis | |
| unsw.relation.OriginalPublicationAffiliation | Hamer, Phillip, PV & Renewable Energy Eng, Engineering, | en_US |
| unsw.relation.OriginalPublicationAffiliation | Chen, Daniel, , Sundrive Australia, | en_US |
| unsw.relation.OriginalPublicationAffiliation | Bonilla, Ruy S., , Department of Materials, University of Oxford, | en_US |
| unsw.relation.faculty | Engineering | |
| unsw.relation.school | School of Photovoltaic and Renewable Energy Engineering | |
| unsw.subject.fieldofresearchcode | 090605 Photodetectors, Optical Sensors and Solar Cells | en_US |
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