Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters

Title	Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters
Author(s)	Schumacher, J Altermatt, Pietro P. Heiser, Gernot, Computer Science & Engineering, Faculty of Engineering, UNSW Aberle, Armin G.
Resource Type	Conference Paper
Conference Details	11th Photovoltaic Science and Engineering Conference; Sapporo, Japan; September 1999
Publication Details	PVSEC-11 Digest of Technical Papers; Tanaka Printing, Kyoto, Japan, 1999; ISBN:; pp.289-290
Language	EN
Rights	Please click here to view the rights
Citation Link	Please use this identifier to cite or link to this item: http://handle.unsw.edu.au/1959.4/39868
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